Ion implantation enhanced formation of 3C-SiC grains at the SiO /Si interface after annealing in CO gas

Béla Pécz, J Stoemenos, M Voelskow, W Skorupa, László Dobos, Anita Pongrácz, Gábor Battistig

JOURNAL OF PHYSICS-CONFERENCE SERIES 1742-6588 1742-6596
2010

View on: MTMT: 1345504 | DOI: 10.1088/1742-6596/209/1/012045 | WoS: 000283739100045 | Scopus: 77950502844 | Google scholar: 10555347008592999800

Erika Tunyogi2021-01-26T16:02:22+02:00January 26th, 2021|