Disorder and cavity evolution in single-crystalline Ge during implantation of Sb ions monitored in-situ by spectroscopic ellipsometry

Tivadar Lohner, Attila Németh, Zsolt Zolnai, Benjamin Kalas, Alekszej Romanenko, Khánh Nguyen Quoc, Edit Szilágyi, Endre Kótai, Emil Agócs, Zsolt Tóth, Judit Budai, Péter Petrik, Miklós Fried, István Bársony, József Gyulai

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 1369-8001 1873-4081
2022

View on: MTMT: 33077841 | DOI: 10.1016/j.mssp.2022.107062 | REAL: 147703 | WoS: 000860756600004 | Scopus: 85137065154 | Google scholar: 5272985802553171158 | SZTE Publicatio: 26205 | Google scholar hash: 2ESvhtz6y4gJ