Z. Baji et al.: Controlled Nucleation of Metal-Sulfide Layers via Sulfur-Based Surface Functionalization: Enhanced Initial Growth of GaSₓ Thin Films

The study investigates the atomic layer deposition of GaSₓ thin films using hexakis(dimethylamino)digallium and H₂S. To overcome delayed nucleation and poor film continuity, a sulfur-based surface functionalization method was introduced, replacing hydroxyl groups prior to deposition. This approach significantly improved nucleation, leading to faster initial growth and more uniform films, even at low cycle numbers.