ha8we

Zsófia Baji has been awarded the prestigious Hungarian State Eötvös Scholarship, which enables the further international development of her research.

Over two exciting days, the journey began at our MEMS lab in Budapest and continued with a campus visit to Infineon’s state-of-the-art fab in Villach, Austria. Participants gained unique insights into front-end production, failure analysis, and the cutting-edge R&D shaping the semiconductor industry. They also had the valuable opportunity to present their research directly to Infineon specialists. A big thank you to the Infineon IPCEI team for their warm welcome and knowledge sharing!

Poster presentation by Zsófia Baji at the AVS-ALD ALE 2025 Conference, Jeju, South KoreaTitle: Vanadium sulfide layers with atomic layer depositionCo-authors: Zsófia Bérces, Zsolt Fogarassy, Zoltán Szabó, Zoltán Kovács, Konrád Kandrai, Péter Petrik, Péter Nemes-Incze, Péter Vancsó

Tímea Török has been awarded the János Bolyai Research Scholarship for a period of 3 years. Research project title: "Nanoscale memristors for neuromorphic and high-frequency applications"

Presentation of Tímea Török at the First Symposium on Physics and Chemistry for Unconventional Computing, AGH University of Krakow

April 4th, 2025; János Volk successfully defended his D.Sc. thesis, “Highly Ordered ZnO Nanowires,” at the Hungarian Academy of Sciences.

Z. Baji et al:  Novel precursor for the preparation of vanadium sulfide layers with atomic layer deposition Editor's PickLD Zsófia Baj, Zsolt Fogarassy,  Attila Sulyok, Zsolt Endre Horváth, Zoltán Szabó https://doi.org/10.1116/6.0004127

Z. Baji et al: Enhancing the nucleation in atomic layer deposition: A study on vanadium sulfide and oxide layers Available to Purchase Special Collection: Atomic Layer Deposition (ALD) Zsofia Baji,  Zsolt Fogarassy, Orsolya Hakkel; Zoltán Szabó https://doi.org/10.1116/6.0004247