Ion implantation enhanced formation of 3C-SiC grains at the SiO /Si interface after annealing in CO gas
Béla Pécz, J Stoemenos, M Voelskow, W Skorupa, László Dobos, Anita Pongrácz, Gábor Battistig JOURNAL OF PHYSICS-CONFERENCE SERIES 1742-6588 1742-6596 2010 View on: MTMT: 1345504 | DOI: 10.1088/1742-6596/209/1/012045 | WoS: 000283739100045 | Scopus: 77950502844 | Google scholar: 10555347008592999800