Formation and characterization of semiconductor Ca2Si layers prepared on p-type silicon covered by an amorphous silicon cap
László Dózsa, György Molnár, Zsolt Zolnai, László Dobos, Béla Pécz, NG Galkin, SA Dotsenko, DA Bezbabny, DV Fomin JOURNAL OF MATERIALS SCIENCE 0022-2461 1573-4803 2013 View on: MTMT: 2158297 | DOI: 10.1007/s10853-012-6945-6 | REAL: 4523 | WoS: 000313495200018 | Scopus: 84884164799 | Google scholar: 8499269031604870562