Tunable, Nucleation-Driven Stochasticity in Nanoscale Silicon Oxide Resistive Switching Memory Devices
Tímea Nóra Török, János Gergő Fehérvári, Gábor Mészáros, László Pósa, András Ernő Halbritter ACS APPLIED NANO MATERIALS 2574-0970 2022 View on: MTMT: 32821968 | DOI: 10.1021/acsanm.2c00722 | REAL: 142770 | WoS: 000821457600001 | Scopus: 85130038245 | Google scholar: 4308845253847167829